Unbenanntes Dokument Friday, 16.05.2008  16:07

 

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 PLD Systems

   PLD Workstation

   Laser MBE cluster tool systems

   Large Area PLD systems

   Plume-Master control software

 PLD components:

   Heater manipulators

   Target manipulators

   Laser heater

   High pressure RHEED systems

 

 

 

Laser Heater
900°C.. 1000°C.. 1200°C and beyond

 

  • Increasing the temperature range of any UHV process

  • reducing the background pressure of the UHV chamber at the high temperature by avoiding hotheater surfaces with all ist disadvantages

The ideal UHV heater

The generation of high temperatures in UHV applications is always a compromize between  the demand of the process and the available heat source for such temperature.The individual vapaour pressure of all involved materials of the heater generate under UHV conditions a  mixture of partial pressures - what could generate probplems with the process conditions. This problem increase with higher temperatures extreme together  with the demand in oxygen resistance of the heater material
The size of the substrate is an other restriction. SURFACE is specialized in the development and production of advanced heater technoloogy for UHV thin film technologies.

High Power Diode Laser  -  the source for clean heating

SURFACE has developed a Laser heater system for substrate sizes of up to 10 mm in diameter,  using the latest available diode laser technology, SURFACE offers a 90 W Laser modul - compact and ready to use with all necessary power supplies.

The complete Laser module LH 90 is a compact unit in a  380x300x155 mm steel case.

The necessary cooling power for the diodes will be supplied from a special cooling module what takes care of the special demands in cooling performance of the Laser. The laser is available for 808 or 940 nm wave length. A light fiber directs the light through a customised focussing optic to the substrate in the distance the customer needs. The window is a standard CF 40 glas viewport.

The total solution from SURFACE

Laser module  LH 90 and the individual  substrate manipulator.

To achive high temperatures , the handling of the substrate has to recognize the limited power of 90 W. With an adapted design, 1000°C for a 10 mm sample are possible. A temperasture  of 1200°C and higher will be achived on a substrate 5x5 mm.
An OMICRON AFM substrate holder (15x18 mm) will be heates to approx.
950°C
The temperature measurement has to be done with a pyrometer, the substrate manipulator includes a thermo- couple, mounted in the front shutter to control  the settings of the pyrometer emission coefficient.

The SURFACE Goniometer Head

SURFACE offers several solutions for substrate manipulators, always recognizing the demands in the substrate transfer of UHV systems.
One solution is including a goniometer stage for a high precise substrate manipulation to optimize the cristall orientation of the substrate to the ebeam of the insitu High pressure RHEED measurement. The manipulator has 3 freedoms, all of them are back lash free.
Tollerances:

Axis range resolution
Z-motion: 1" 0,02 mm
Rotation: +/- 60° 0,02°
Tilt: +/- 3° 0,02°

 
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